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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FSM101 THRU FSM107
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram
MELF
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.205 (5.2) .190 (4.8)
SOLDERABLE ENDS
.028 (.60) .018 (.46) .106 (2.7) .095 (2.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 55o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC Maximum Average Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 4) @TA = 25 o C @TA = 125 oC SYMBOL VF IR trr 150 FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS 1.3 50 5.0 100 250 500 Volts uAmps uAmps uAmps nSec 2001-4 SYMBOL VRRM VRMS VDC IO IFSM (Note 2) RJL (Note 3) RJA CJ TJ, TSTG FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 30 75 15 -65 to + 175 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps
0 0
C/ W C/ W pF 0 C
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
RATING AND CHARACTERISTIC CURVES ( FSM101 THRU FSM107 )
AVERAGE FORWARD CURRENT, (A)
FORWARD SURGE CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 .8 .6 .4 .2 0
Single Phase Half Wave 60Hz Resistive or Inductive Load
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 20 10
8.3ms Single Half Sine-Wave (JEDED Method)
0 1 2 4 6 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz
0
25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
10 4
TJ = 100
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10
TJ = 25 Pulse Width = 300us 1% Duty Cycle
1.0 .4
1.0
.1 .04
TJ = 25
.1
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A (+) 25 Vdc (approx) (V) D.U.T (V) PULSE
GENERATOR
.01 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V )
TJ = 25
trr
0 -0.25A
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+)
1 NOTES: Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
-1.0A 1cm
SET TIME BASE FOR 50/100 ns/cm
JUNCTION CAPACITANCE, (pF)
RECTRON

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